advanced power n-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss 30v lower gate charge r ds(on) 28m small footprint & low profile package i d 7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without notice operating junction temperature range -55 to 150 201009022 thermal data parameter 1 storage temperature range continuous drain current 3 , v gs @ 10v 5.6 pulsed drain current 1 20 total power dissipation 2 -55 to 150 gate-source voltage + 20 continuous drain current 3 , v gs @ 10v 7 parameter rating drain-source voltage 30 AP2606AGY-HF halogen-free product g d s advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the s0t-26 package is widely used for commercial-industrial applications. d d d d g s sot-26
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 28 m v gs =4.5v, i d =5a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 10 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =5a - 6 9.6 nc q gs gate-source charge v ds =15v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ?
AP2606AGY-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 20 30 40 50 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0 10 20 30 40 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 0 10 20 30 40 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 10v 7.0v 6.0v 5.0v v g =4.0v i d =250ua
AP2606AGY-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 q v g 4.5v q gs q gd q g charge 0 100 200 300 400 500 600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 156 : /w t t 0 2 4 6 8 10 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =15v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse t d(on) t r t d(off) t f v ds v gs 10% 90% 0.02 operation in this area limited by r ds(on)
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